World’s First
Copper-Free Silicon Wafers
Deeplight copper-free silicon wafers provide a clean, thermally stable substrate for Si₃N₄ and hybrid photonic circuits, enabling low-loss waveguides and repeatable soliton microcomb operation at wafer scale.
World’s First Copper-free silicon wafers are now available for evaluation
and production orders
Key features
Copper-diffusion blocking technology
Prevents copper migration into oxide and nitride layers, enabling stable, predictable photonic device behaviour.
Ultra-low optical loss platform
Provides a clean substrate for high-Q Si₃N₄ waveguides with reduced absorption and thermal drift.
Deterministic soliton microcomb stability
Supports reliable and repeatable soliton generation, even at low repetition rates (~40 GHz).
Key specifications
Thermal oxide thickness
High-quality THOX undercladding ranging from 0 to 9,000 nm.
Wafer size
Standard 4 and 6-inch silicon wafer optimized for Si₃N₄ and hybrid photonic integration.
Substrate material
Proprietary copper-free silicon substrate engineered to eliminate Cu contamination during fabrication.
Our copper-removal technique which overcomes thermal instabilities for deterministic soliton generation, is detailed in a Nature publication by Ji et al. (2025)
Want deeper specs on our copper-free silicon wafers? Download the datasheet
or get in touch with our team.
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